The origin of the limited impact of an inclined sidewall Al reflector on the light output power of mid-power deep ultraviolet light-emitting diodes

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Authors: Hualiang Qiu, Yuedong Jia, Shen Wang, Yanan Guo, Xue-Jiao Sun, Xuecheng Wei, Kai Guo, Xiaona Zhang, Xiaolong Jia, Congmin Shen, Tong Zhang, Junxi Wang
+5 more Jinmin Li, Yonghui Zhang, Zi-Hui Zhang, Naixin Liu, J.H. Yan
Cited by: 0
References: 24

Abstract

Abstract In this work, the impact of aluminum (Al) reflector coated on the 20° inclined sidewall on light extraction efficiency (LEE) of mid-power deep ultraviolet light-emitting diodes (DUV LEDs) is systematically investigated. Although theoretical analysis indicates that the Al reflector can effectively reflect photons into the escape cone, experimental results reveal that the light output power (LOP) of DUV LEDs is enhanced by only 4.8% for the DUV LEDs using the Al reflector on inclined sidewall. The limited enhancement can be attributed to the fact that the inclined sidewall Al reflector can only reflect the downward-propagating light into the escape cone. Additionally, the small sidewall-to-total-area ratio in the mid-power DUV LEDs and the significant absorption in p-type layer further reduce the amount of light reaching the inclined sidewall. Therefore, the inclined sidewall Al reflector strategy is not recommended for mid-power DUV LEDs due to its limited effectiveness and high fabrication cost, unless eliminating absorption in the p-type layer or increasing inclined sidewall area are utilized.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Physica Scripta
Volume
101
Issue
2
Pages
025515–025515
Publication date
2 January 2026