Surface electric field optimization in vertical trench β -Ga 2 O 3 Schottky barrier diode with MOS capacitor integration

Abstract High surface fields represent an inherent trade-off for Ga 2 O 3 power devices concerning their on-state energy consumption and voltage capability. This work proposes a Ga 2 O 3 Schottky barrier diode that incorporates an embedded trench Schottky junction and a metal-oxide-semiconductor (MOS) capacitor. This structure aims to reduce surface field and mitigate the peak electric field, thus achieving low power consumption and high breakdown voltage. Leveraging the trench design, the T-SBD achieves a breakdown voltage of 571 V, double that of a conventional SBD (285 V). The trench-wrapped electrodes enhance sidewall depletion under reverse bias, while the MOS capacitor grid columns further suppress leakage current to as low as 8.6 μA cm −2 . Furthermore, TCAD simulation results further demonstrate the effective electric field optimization of the devices with Trench SBD structure. This research lays a solid foundation for the development of higher-power Ga 2 O 3 Schottky diodes.