Density of states, quantum concentration, and degeneracy pressure in confined electronic systems

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Authors: B.C. Andrade, Rayda Gammag
Cited by: 1
References: 21

Abstract

Abstract We present a simple derivation of the d -dimensional density of states (DOS) in confined electronic systems. Although previous studies often apply a heuristic L 3− d factor to DOS expressions, we show that this factor arises naturally from a consistent treatment of quasi-dimensional systems. Using a Fermi gas model, we calculate the carrier concentration n in different dimensions and introduce the concept of quantum concentration n Q as a critical threshold for the quantum confinement effect. We further demonstrate that the electron degeneracy pressure—scaling with n ( d +2)/ d —provides a thermodynamic explanation for the enhancement of the carrier density under confinement.

Fields of Study & Subjects

Cold Atom Physics and Bose-Einstein Condensates Physics of Superconductivity and Magnetism Spectral Theory in Mathematical Physics

Publication details

Journal / source
Physica Scripta
Publisher
IOP Publishing
Volume
101
Issue
6
Pages
065913–065913
Publication date
30 January 2026
Language
EN