Temperature and electrical control of energy transfer in WS 2 /hBN/MoS 2 heterostructure

Abstract Transition metal dichalcogenides (TMDs)-based heterostructures (HSs) emerged as a promising platform to explore energy transfer (ET), demonstrating substantial potential for advancing next-generation optoelectronic devices. The ET in these heterostructures can be systematically modulated through variations in temperature and gate voltage. Herein, we systematically investigate the ET in WS 2 /MoS 2 heterostructure incorporating interlayer hexagonal boron nitride (hBN). The resonant overlap of the excitonic states between the two TMD materials leads to an enhancement in the photoluminescence (PL) emission. As the temperature decreases, the enhancement factor ( β ) decreases, signifying the reduced ET efficiency. Additionally, gate-dependent PL measurements further reveal that efficient ET occurs at high negative gate voltage, suggesting a larger population of excitons increases the possibility of ET. This study not only offers valuable insights into the mechanism governing ET in TMD-based HSs, offering strategies for optimizing ET in future optoelectronic applications.