Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS 2 field effect transistors with hysteresis of electrical characteristics
Abstract
Abstract This paper presents a detailed experimental study of the electrical characteristics of back-gated few-layer MoS 2 field-effect transistors (FETs) via combined gate-to-channel capacitance and drain current measurements. Under proper measurement conditions, such measurements allow to extract the effective carrier mobility in thin-film MoS 2 FETs. This method is applied to investigate the special features of the mobility behavior in MoS 2 FETs with significant hysteresis of the transfer characteristics. It is found that the carrier mobility in such devices at the reverse gate-voltage sweep is much higher than that at the forward gate-voltage sweep. The possible origins for this effect are discussed.
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Physica Scripta
- Volume
- 101
- Issue
- 10
- Pages
- 105909–105909
- Publication date
- 26 February 2026
- Language
- EN