The temperature dependence of the optoelectronic characteristics of vertical-cavity surface-emitting lasers

Abstract Current research on the temperature characteristics of vertical-cavity surface-emitting lasers (VCSELs) mostly focuses on the above-threshold regime, while investigations into their performance evolution with temperature in the pre-lasing stage remain relatively scarce. Using a commercial GaAs-based 850 nm electrically driven VCSEL, we measured its characteristics over a temperature range of 10 K–290 K under a closed-cycle refrigeration system. We synchronously measured the electroluminescence spectra and power–current–voltage ( P – I – V ) curves of the device at different temperatures and current levels, then analyzed the temperature-dependent characteristics of its electrical injection spectroscopy (central wavelength and linewidth) and electroluminescence efficiency. At a low temperature of 20 K, the linewidth of the short-wavelength emission peak of the device narrows with the increase of injection current, and low temperature significantly suppresses the phonon broadening effect and carrier–phonon scattering inside the VCSEL, weakening non-radiative recombination. This provides experimental support for the application of VCSELs in optical interconnects and high-sensitivity sensing for extreme scenarios such as deep-space exploration and extreme cold environment monitoring.