Effect of Heavy Ion Radiation on TDDB Properties and Lifetime Prediction of High-k Dielectric Layers

Abstract This study investigates the effect of heavy ion radiation on the time-dependent dielectric breakdown (TDDB) behavior of high-k dielectric layers. By testing and comparing parameters such as breakdown voltage, breakdown time, charge quantity, and lifetime of the dielectric layer before and after irradiation, combined with analysis of the micro-mechanism, the effect of heavy ion radiation on dielectric layer reliability is revealed. The results show that heavy ion radiation can effectively induce defects in the dielectric layer; these defects are deeply involved in the evolution of TDDB, form conductive paths, accelerate charge transport and defect accumulation, and ultimately lead to the degradation in breakdown time, charge quantity, and lifetime. Additionally, the larger the area of the dielectric layer, the easier it is to form conductive paths, which further exacerbates reliability degradation. This study provides a theoretical basis for optimizing the reliability of devices in radiation environments.