Optical properties of five-layer and ten-layer CrI 3 films under high pressure: Insights from in situ Raman and UV–visible spectroscopy

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Authors: Zhipeng Yan, Xiaodong Yao, Guangyang Dai, C. B. Li, Qunfei Zheng, Jun Han, Ying 影 Liu 刘, Xiaowei Sun
Cited by: 0
References: 36

Abstract

Abstract The two-dimensional van der Waals ferromagnetic semiconductor CrI 3 provides an ideal platform for exploring the interplay among structural, electronic and magnetic degrees of freedom. In this work, we systematically investigate the thickness-dependent optical properties of five-layer and ten-layer CrI 3 under hydrostatic pressure up to 27.9 GPa by in situ Raman and UV–visible absorption spectroscopy. All A g Raman modes exhibit a continuous blueshift with increasing pressure. The low-frequency modes ( A g 1 – A g 3 ) are mainly associated with enhanced interlayer coupling, whereas the high-frequency modes ( A g 4 – A g 6 ) reflect the suppression of surface vibrations. The Raman modes disappear at approximately 4.9 GPa for the five-layer sample and 11.2 GPa for the ten-layer sample, indicating a stronger strain sensitivity in thinner CrI 3 . Optical absorption measurements show a pronounced redshift of the absorption edge, accompanied by bandgap narrowing from 2.26 eV to 1.26 eV in five-layer CrI 3 . At comparable pressures, the five-layer sample consistently exhibits a wider bandgap than the ten-layer one, which is attributed to quantum confinement effects and reduced interlayer hybridization. Above 12.7 GPa, the bandgap reduction becomes less pronounced, probably due to enhanced Cr 3d/I 5p orbital overlap and strengthened superexchange interactions. These results reveal a clear layer-dependent structure–electronic coupling in CrI 3 under compression and provide useful insights into pressure modulation of van der Waals magnetic semiconductors.

Fields of Study & Subjects

2D Materials and Applications Graphene research and applications Topological Materials and Phenomena

Publication details

Journal / source
Chinese Physics B
Volume
35
Issue
5
Pages
057801–057801
Publication date
3 February 2026