Synergistic Effects of Total Dose Gamma-Ray Radiation and High-Temperature Reverse Bias Stress on the Performance of SiC MOSFETs

Abstract This paper investigates the synergistic effects of total dose γ-ray radiation and high-temperature reverse bias (HTRB) stress on the performance of 1200 V SiC MOSFETs (BLC75N120) produced by Shanghai Belling Company. A systematic approach was employed, incorporating γ-ray irradiation at doses ranging from 0 to 3 kGy, followed by HTRB stress at 170 °C. Characterization of electrical performance revealed a significant negative shift in the threshold voltage (V TH ), a reduction in on-state resistance (R on ) and a substantial increase in the source-drain leakage current (I DSS ) with increasing irradiation doses, alongside further degradation observed under HTRB stress. Deep-level transient spectroscopy (DLTS) analyses of drain-source capacitance (C ds ) and gate-drain capacitance (C gd ) revealed various traps within the PN junction region and in the JFET region near the gate oxide., pinpointing the traps that greatly affect the I DSS and highlighting the emergence of new traps following irradiation. The findings illustrate the critical interplay between radiation exposure and HTRB stress in altering device performance, emphasizing their implications for the reliability of SiC power devices in high-radiation environments, such as aerospace applications.