Characteristics of gallium oxide nMOSFET inverter

Abstract β -Ga 2 O 3 MOS inverter should play a crucial role in β -Ga 2 O 3 electronic circuits. Enhancement-mode (E-mode) MOSFET was fabricated based on β -Ga 2 O 3 film grown by atomic layer deposition technology, and the β -Ga 2 O 3 inverter was further monolithically integrated on this basis. The β -Ga 2 O 3 nMOSFET exhibits excellent electrical characteristics with an on/off current ratio reaching 10 5 . The logic inverter shows outstanding voltage inversion characteristics under low-frequency from 1 to 400 Hz operation. As the frequency continues to increase to 10 K, the reverse characteristic becomes worse due to parasitic capacitance induced by processes, and the difference between the highest and lowest values of V OUT has an exponential decay relationship with the frequency. This paper provides the practice for the development of β -Ga 2 O 3 -based circuits.