Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO 2 passivation

Abstract In this work, we demonstrated the InSnO (ITO) TFTs passivated with SiO 2 via the PECVD process compatible with large-area production for the first time. The passivated ITO TFTs with various channel thicknesses ( t ch = 4, 5, 6 nm) exhibit excellent electrical performance and superior uniformity. The reliability properties of ITO TFTs were evaluated in detail under positive bias stress (PBS) conditions before and after passivation. Compared to the devices without passivation, the passivated devices have only 50% threshold voltage degradation (Δ V th ) and 50% newly generated traps due to excellent isolation of the ambient atmosphere. The negligible performance degradation of ITO TFTs with passivation during negative bias stress (NBS) and negative bias temperature stress (NBTS) verifies the outstanding immunity to the water vapor of the SiO 2 passivation layer. Overall, the ITO TFT with the t ch of 6 nm and with SiO 2 passivation exhibits the best performance in terms of electrical properties, uniformity, and reliability, which is promising in large-area production.