AlScN: characteristics, micro/nano fabrication and multiple applications

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Authors: Shihang Liu, Jinfeng Gao, Jiajie Pan, Lin Li, Hanxiang Jia, Shuangzan Lu, Maowei Zhang, Bo Zhao, Jun Liu
Cited by: 2
References: 91

Abstract

Abstract Aluminum scandium nitride (AlScN), an emerging Ⅲ-nitride semiconductor material, has attracted significant attention in recent years due to its exceptional piezoelectric properties, high thermal stability, tunable bandgap, and excellent compatibility with micro/nano fabrication. This paper systematically reviews the crystal structure, fundamental properties, and property modulation mechanisms of AlScN. It also summarizes recent progress in micro/nano fabrication technologies, including deposition, etching, and device integration. Furthermore, the applications of AlScN in diverse fields such as micro-electromechanical systems (MEMS), RF communications, energy conversion, optoelectronics and sensors are discussed. Finally, current challenges and promising future research directions for AlScN are outlined.

Fields of Study & Subjects

Acoustic Wave Resonator Technologies GaN-based semiconductor devices and materials Metal and Thin Film Mechanics

Publication details

Journal / source
Journal of Semiconductors
Publisher
IOP Publishing
Volume
47
Issue
3
Pages
031301–031301
Publication date
1 March 2026