MoS 2 quantum dots/AlGaN nanowire heterostructure-based photodetectors for solar-blind photodetection and optical communication

Abstract Solar-blind ultraviolet photodetectors (UV PDs), capable of detecting UV radiation without interference from sunlight, have attracted significant interest. Herein, we propose a 0D/1D heterostructure for UV PDs, which was fabricated by spin-coating MoS 2 quantum dots onto p-AlGaN nanowires. The device achieves a high responsivity of 175.5 mA/W and a fast response speed of 83 ms at 250 nm illumination under self-powered mode, which improved nearly 1235% and 521% after MoS 2 decoration, respectively. These improvements can be attributed to the type-Ⅱ heterostructure formed between p-AlGaN and MoS 2 , which facilitates enhanced charge separation and carrier transport. Later, we demonstrate the implementation of this device in optical communication, achieving high-accuracy transmission of "GaN" ASCII code signals. Such a 0D/1D heterostructure provides an effective strategy for high-performance solar-blind UV PD.