Ultrathin amorphous-Ga 2 O 3 vertical SBD-based bridge rectifier and its hybrid buck system
Abstract
Abstract This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga 2 O 3 vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET. The fabricated vertical Ga 2 O 3 SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm. The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz. And the hybrid buck system composed of the Ga 2 O 3 bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz V in . This work validates the practical value of Ga 2 O 3 rectifiers in high-frequency conversion systems.
Fields of Study & Subjects
Ga2O3 and related materials
Transition Metal Oxide Nanomaterials
Thin-Film Transistor Technologies
Publication details
- Journal / source
- Journal of Semiconductors
- Publisher
- IOP Publishing
- Volume
- 47
- Issue
- 4
- Pages
- 042306–042306
- Publication date
- 1 April 2026