Visual temperature-sensing properties of negative thermal expansion Sc 2 Mo 3 O 1 2 :Eu 3 + /Tb 3 + flexible films

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Authors: Kan Kan, Yangke Cun, Qinghan Zhang, Shenglin Ma, Shilei Yan, Anjun Huang, Zhengwen Yang
Cited by: 1
References: 59

Abstract

Abstract Fluorescence temperature sensing technology has become a research direction in the field of temperature measurement with its significant advantages of non-contact measurement, high spatial resolution, fast response and anti-electromagnetic interference. Although the double rare earth ion doping ratio fluorescent temperature sensing materials have made significant progress, the thermal quenching phenomenon is still the key bottleneck restricting its performance improvement. In this study, we propose to construct a flexible Sc 2 Mo 3 O 12 :Eu 3+ /Tb 3+ film with negative thermal expansion characteristics, and systematically study its visual temperature sensing characteristics. The negative thermal expansion characteristics of Sc 2 Mo 3 O 12 matrix effectively inhibited the thermal quenching rate of Tb 3+ luminescence, and enhanced the thermal enhanced luminescence effect of Eu 3+ . This two-way regulation mechanism improves the intensity comparison of the two light-emitting channels, and provides an innovative strategy for improving the sensitivity of temperature sensing. The flexible film based on Eu 3+ /Tb 3+ codoped system realizes intuitive temperature perception through the significant change of fluorescent color, and can complete the temperature interpretation without complex spectral equipment. This greatly expands its application prospect in the field of rapid field detection and real-time monitoring, and shows its broad potential in the fields of wearable devices, biomedical diagnosis, and real-time monitoring of surface temperature field.

Fields of Study & Subjects

Thermal Expansion and Ionic Conductivity Luminescence Properties of Advanced Materials Optical properties and cooling technologies in crystalline materials

Publication details

Journal / source
Journal of Semiconductors
Publisher
IOP Publishing
Volume
47
Issue
8
Pages
082601–082601
Publication date
1 August 2026