Low-threshold GaN surface emitting lasers: A comparative study of circular grating and photonic crystal designs

Journal of Semiconductors 2026

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Authors: Yuzhen Zheng, Zhiwei Sun, Tong Xu, Bolin Zhou, Xiaoqi Yu, Xinrui Wang, Yi-Xiang Wang, Yongchen Miao, Suman Xia, Zhi Liu, Zengcheng Li, Pengyan Wen
+4 more Kanglin Xiong, Jianping Liu, Huaibing Wang, Hui Yang
DOI: 10.1088/1674-4926/25120001
Cited by: 3
References: 18

Abstract

Abstract We demonstrate room-temperature pulsed lasing of two types of GaN-based surface emitting lasers (SEL) fabricated without epitaxial regrowth. We present a direct comparison between a circular grating (CGSEL) and a photonic crystal (PCSEL) design. The devices are realized by etching the photonic structures directly into the p-GaN cladding, and utilizing a patterned indium tin oxide (ITO) top contact. Both designs exhibit lasing near 438 nm under pulsed current injection. The CGSEL, incorporating a central defect, achieves a low threshold current density (

Fields of Study & Subjects

Photonic Crystals and Applications GaN-based semiconductor devices and materials Optical Coatings and Gratings

Publication details

Journal / source
Journal of Semiconductors
Publisher
IOP Publishing
Volume
47
Issue
5
Pages
052504–052504
Publication date
1 May 2026