An adaptive accuracy correction strategy in resistive random access memory (RRAM)-based computing in memory (CIM) in low-temperature scenarios

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Authors: Jinghui Tian, Chengyue Li, Pengbin Liu, Xu Zheng, Qi Liu, Xiaoxin Xu
Cited by: 1
References: 24

Abstract

Abstract With the widespread application of artificial intelligence (AI) computing in low-temperature scenarios such as deep space and deep sea, RRAM-based edge computing has gradually attracted attention. In this paper, an adaptive reference conductance algorithm (ARCA) is proposed to improve the inference accuracy in low-temperature scenarios due to the conduction drift. The RRAM CIM chips with high read cycles are fabricated based on 28 nm CMOS logic technology, and the read times could reach 10 12 . By studying the influence of conductance drifting on inference accuracy in low temperature, a model of temperature and optimal reference conductance is proposed. Furthermore, by this model, adaptive selecting optimal reference conductance of analog-to-digital converters (ADCs) to quantize column current of RRAM array under different temperatures. At −40 ℃, the reference accuracy could increase from 75.43% to 86.8%.

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Journal of Semiconductors
Publisher
IOP Publishing
Volume
47
Issue
7
Pages
072301–072301
Publication date
1 July 2026