Characterization of conducting surface states in single-crystalline FeSi
Abstract
Abstract The resistivity of a single-crystalline FeSi sample is measured upon continuous reduction of the sample thickness. This controlled manipulation of the surface-to-volume ratio allows for the separation of the bulk and surface conductivity of FeSi. At high temperatures T ≳ 70 K the transport is dominated by the insulating bulk while at low temperatures T ≲ 70 K metallic surface states contribute to the electric conductance. An effective two-channel model has been applied to approximate the surface conductivity.
Fields of Study & Subjects
Surface and Thin Film Phenomena
Topological Materials and Phenomena
Rare-earth and actinide compounds
Publication details
- Journal / source
- Journal of Physics Conference Series
- Volume
- 3161
- Issue
- 1
- Pages
- 012009–012009
- Publication date
- 1 January 2026