D Flip-Flop Using a-IGZO Flexible TFT Technology

Abstract Thin-film transistors based on amorphous indium-gallium-zinc oxide (a-IGZO) fabricated on flexible substrates offer a high-performance platform for implementing low-power digital circuits. The combination of high electron mobility, low leakage current, and excellent electrical stability enables the realization of fundamental sequential logic elements. This work presents the design and implementation of a low-transistor-count D-type flip-flop utilizing only 14 N-channel MOSFETs operating from a 5 V supply. The circuit is characterized with a 100 MHz data input (D) and a 200 MHz clock signal (CLK), both exhibiting a 3 V peak swing. Electrical characterization demonstrates stable operation with suitable performance metrics, confirming the viability of this technology for integration into more complex digital architectures and emerging applications in flexible and transparent electronics.