Beam extraction and transport for high current ribbon beam ion implanters
Abstract
Abstract High current ion implanters for semiconductor manufacturing are primarily used for doping and amorphization of source and drain regions of devices on silicon wafers. We discuss the advantages and challenges of achieving high current implantation with a ribbon. We show the role that plasma uniformity plays in extracting a uniform beam from a long slit. We also show results of measurements from the magnetized ion source that indicate cyclic fluctuations in the extracted beam current in the frequency range of 100 kHz. How this E x B phenomenon affects the transmission through the implanter will be discussed.
Fields of Study & Subjects
Silicon and Solar Cell Technologies
Plasma Diagnostics and Applications
Space Technology and Applications
Publication details
- Journal / source
- Journal of Physics Conference Series
- Publisher
- IOP Publishing
- Volume
- 3237
- Issue
- 1
- Pages
- 012018–012018
- Publication date
- 1 May 2026