Design of a 25 Gb/s high-voltage radiation-tolerant driver for SiPh modulators in 28 nm CMOS technology
Abstract
Abstract This work presents the design of a radiation-tolerant high-voltage driver for high-speed electro-optical transmitters implemented in 28 nm CMOS technology. The driver achieves 25 Gb/s modulation with a 3.6 V output swing, effectively bridging the voltage gap between low-voltage CMOS circuitry (0.9 V nominal) and silicon-photonics modulators. A multi-voltage-domain architecture enables this performance using only thin-oxide devices and a single additional supply, optimizing both power efficiency and layout area. The proposed driver enables the realization of 100 Gb/s optical downlinks over a single fiber by combining four 25 Gb/s channels through wavelength-division multiplexing, targeting high-speed data transmission in future radiation environments.
Fields of Study & Subjects
Radiation Effects in Electronics
Advancements in PLL and VCO Technologies
Radio Frequency Integrated Circuit Design
Publication details
- Journal / source
- Journal of Instrumentation
- Publisher
- IOP Publishing
- Volume
- 21
- Issue
- 03
- Pages
- C03009–C03009
- Publication date
- 1 March 2026
- Language
- EN