Preparation of gallium-lithium co-doped silicon wafers as radiation hardened materials

Journal of Physics Materials 2026 Open access

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Authors: Charles Seron, Benoît Martel, Hélène Lignier, Éric De Vito, N. Enjalbert, Samuel Harrison, Sébastien Dubois
DOI: 10.1088/2515-7639/ae33f9
Cited by: 0
References: 21

Abstract

Abstract This work aims to combine different approaches to produce crystalline silicon substrates featuring an improved radiation hardness: (i) p-type conductivity using gallium (Ga) as main dopant (ii) lithium (Li) co-doping (iii) thickness reduction (

Fields of Study & Subjects

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Muon and positron interactions and applications

Publication details

Journal / source
Journal of Physics Materials
Volume
9
Issue
1
Pages
015013–015013
Publication date
6 January 2026
Language
EN