A miniaturized multi-bandpass negative group delay circuit with stable negative group delay, large bandwidth, and low insertion loss

Abstract A novel multi-bandpass negative group delay (NGD) circuit is proposed in this paper. In the current field of multi-bandpass negative group delay, the negative group delay parameters of most NGD circuits decrease significantly with increasing frequency, and the group delay parameters also exhibit substantial fluctuations. This proposed circuit features stable negative group delay parameters, low insertion loss, a wide negative group delay bandwidth, and excellent negative group delay performance. The circuit is composed of three components: resistors, inductors, and capacitors. Using a three-band bandpass NGD circuit as an example, the paper explores the feasibility of implementing n-order bandpass NGD circuits. It also examines how different component values affect the circuit’s center frequency, negative group delay, and insertion loss. The actual measurement results closely match the simulation results, successfully achieving the multi-band bandpass NGD function. The frequencies of the circuit with negative group delay are 80 MHz, 150 MHz, and 230 MHz, the corresponding group delay values are −2.01 ns, −1.92 ns, and −1.82 ns; the insertion loss values are −2.36 dB, −2.28 dB, and −2.17 dB.