A novel field effect transistor architecture - the GAIA MOSFET
Abstract
Abstract This work presents a new FET architecture which allows maximizing the electrostatic control of the transistor, equivalent to 6 or 8 gates. The GAIA (gate-all-inside-and-around) MOSFETs have enhanced flexibility, with significantly higher effective channel width for a given footprint or a footprint reduction for a given effective width, as well as better drive current and control of short channel effects compared with GAA (gate-all-around) or FinFET devices with the same footprint. Additional parameters compared with GAA and FinFET, due to the inner gate, also enable optimizing the electrical properties of GAIA MOSFETs for low power or high performance applications.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Silicon Carbide Semiconductor Technologies
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Engineering Research Express
- Publisher
- IOP Publishing
- Volume
- 8
- Issue
- 9
- Pages
- 095329–095329
- Publication date
- 27 April 2026