Fluctuation-Induced Giant Magnetoresistance in Charge-Neutral Graphene

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Authors: Alex Levchenko, E. Kirkinis, A. V. Andreev
Cited by: 0
References: 33

Abstract

The Johnson-Nyquist noise associated with the intrinsic conductivity of the electron liquid induces fluctuations of the electron density in charge-neutral graphene devices. In the presence of external electric and magnetic fields, the fluctuations of charge density and electric current induce a fluctuating hydrodynamic flow. We show that the resulting advection of charge produces a fluctuation contribution to the macroscopic conductivity of the system, σ_{fl}, and develop a quantitative theory of σ_{fl}. At zero magnetic field, σ_{fl} diverges logarithmically with the system size and becomes rapidly suppressed at relatively small fields. This results in giant magnetoresistance of the system.

Fields of Study & Subjects

Graphene research and applications Quantum and electron transport phenomena Topological Materials and Phenomena

Publication details

Journal / source
Physical Review Letters
Volume
136
Issue
12
Pages
126301–126301
Publication date
5 March 2026
Language
EN