Coupling a Ge 73 Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon

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Authors: Paul Steinacker, Gauri Goenka, Rocky Y. Su, Tuomo Tanttu, Wee Han Lim, Santiago Serrano, Tim Botzem, Jesús D. Cifuentes, Shao Qi Lim, Jeffrey Colin McCallum, Brett C. Johnson, Fay E. Hudson
+8 more K. W. Chan, Christopher C. Escott, André Ricardo de Carvalho Saraiva, Chih Hwan Yang, Vincent Mourik, Andrea Morello, Andrew S. Dzurak, Arne Laucht
Cited by: 0
References: 51

Abstract

Single nuclear spins in silicon are a promising resource for quantum technologies due to their long coherence times and excellent control fidelities. Qubits and qudits have been encoded on donor nuclei, with successful demonstrations of Bell states and quantum memories on the spin-^{1}/_{2} ^{31}P and cat-qubits on the spin-^{7}/_{2} ^{123}Sb nuclei. Isoelectronic nuclear spins coupled to gate-defined quantum dots, such as the naturally occurring ^{29}Si isotope, possess no additional charge and allow for the coupled electron to be shuttled without destroying the nuclear spin coherence. Here, we demonstrate the coupling of a spin-^{9}/_{2} ^{73}Ge nuclear spin to a gate-defined quantum dot in SiMOS via Pauli spin blockade readout using rf reflectometry. We observe the hyperfine interaction (HFI) to the coupled quantum dot electron and are able to tune it from 180 to 350 kHz, through the voltages applied to the lateral gate electrodes. This smaller HFI combined with the faster readout enable easier quantum nondemolition readout of the nuclear spin state. Thus, this work lays the foundation for future spin control experiments on the spin-^{9}/_{2} qudit as well as more advanced experiments such as entanglement distribution between distant nuclear spins or repeated weak measurements.

Fields of Study & Subjects

Quantum and electron transport phenomena Surface and Thin Film Phenomena Magnetic properties of thin films

Publication details

Journal / source
Physical Review Letters
Publisher
American Physical Society (APS)
Volume
136
Issue
23
Pages
230602–230602
Publication date
5 May 2026
Language
EN