Giant Isotope Effect on the Excited-State Lifetime and Emission Efficiency of the Silicon T Center
Abstract
Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T center, a telecommunications-band emitter in silicon, and find a strong isotope dependence of its excited-state lifetime. In particular, the lifetime of the deuterium T center is over five times longer than the common protium variant. We measure an isotope-dependent shift of the local vibrational carbon-hydrogen stretch mode energy and show through explicit first-principles calculations that the dramatic lifetime difference is consistent with strong suppression of nonradiative decay due to the reduced energy of this mode for deuterium T centers. Our results imply that the deuterium T center approaches unit quantum efficiency, enabling more efficient single-photon sources and quantum memories and improved readout of the T center electron spin.
Fields of Study & Subjects
Silicon and Solar Cell Technologies
Silicon Nanostructures and Photoluminescence
Luminescence Properties of Advanced Materials
Publication details
- Journal / source
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Volume
- 136
- Issue
- 5
- Pages
- 053602–053602
- Publication date
- 8 January 2026
- Language
- EN