Giant Isotope Effect on the Excited-State Lifetime and Emission Efficiency of the Silicon T Center

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Authors: Moein Kazemi, Mehdi Keshavarz, Mark E. Turiansky, John L. Lyons, N. V. Abrosimov, Stephanie Simmons, Daniel Higginbottom, M.L.W. Thewalt
Cited by: 4
References: 51

Abstract

Efficient single-photon emitters are desirable for quantum technologies including quantum networks and photonic quantum computers. We investigate the T center, a telecommunications-band emitter in silicon, and find a strong isotope dependence of its excited-state lifetime. In particular, the lifetime of the deuterium T center is over five times longer than the common protium variant. We measure an isotope-dependent shift of the local vibrational carbon-hydrogen stretch mode energy and show through explicit first-principles calculations that the dramatic lifetime difference is consistent with strong suppression of nonradiative decay due to the reduced energy of this mode for deuterium T centers. Our results imply that the deuterium T center approaches unit quantum efficiency, enabling more efficient single-photon sources and quantum memories and improved readout of the T center electron spin.

Fields of Study & Subjects

Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence Luminescence Properties of Advanced Materials

Publication details

Journal / source
Physical Review Letters
Publisher
American Physical Society (APS)
Volume
136
Issue
5
Pages
053602–053602
Publication date
8 January 2026
Language
EN