Tunneling magnetoresistance in a junction made of X -wave magnets with X = p , d , f , g , i
Abstract
We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of X -wave magnets with X = p , d , f , g , i , where X = d , g , i corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to | J | / ( N X Γ ) for small Γ , where N X is the number of the nodes of the X -wave magnet, J is the strength of the X -wave magnet, and Γ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to J 2 / Γ 2 for small Γ . Therefore, the TMR ratio is larger in ferromagnets for | J | > Γ . However, the X -wave magnets are expected to achieve high-speed and ultradense memory owing to the zero net magnetization.
Fields of Study & Subjects
Magnetic properties of thin films
Physics of Superconductivity and Magnetism
Publication details
- Journal / source
- Physical review. B./Physical review. B
- Publisher
- American Physical Society (APS)
- Volume
- 113
- Issue
- 15
- Publication date
- 10 March 2026
- Language
- EN