Tunable band-filling effects on thermoelectric properties and anomalous Hall conductivity in Weyl semimetal Co 3 Sn 2 S 2

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Authors: Y. H. Chang, P. J. Sun, H.-J. Chen, D. Chandrasekhar Kakarla, P. C. Wang, Shiu‐Ming Huang, P. Y. Yang, Y. J. Tsai, M. N. Ou, R. H. Jhang, Shang‐Fan Lee, Chun‐Chieh Chang
+10 more J. Y. Huang, C. M. Cheng, W. H. Huang, H. L. Meng, Pallab Bag, Y. K. Kuo, Chia‐Nung Kuo, C. S. Lue, H. D. Yang, Hung‐Cheng Wu
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References: 80

Abstract

The magnetic Weyl semimetal Co 3 Sn 2 S 2 has garnered significant experimental and theoretical interest, particularly regarding its electronic structure and transport properties. In this study, we comprehensively investigated the effects of Fe and Ni substitution in Co 3 Sn 2 S 2 . The temperature-dependent Seebeck coefficient ( S ) implies that the reduction of the band gap and the shift in the Fermi level ( E F ) due to Fe and Ni substitution, which was supported by angle-resolved photoemission spectroscopy results. These band-structure modifications influence not only thermoelectric (TE) performance but also the anomalous Hall conductivity ( σ xy A ). Specifically, Fe substitution increases σ xy A via skew scattering, while Ni substitution increases σ xy A via intrinsic deflection with minor skew scattering. Additionally, the Fe and Ni dopant-induced changes in the c / a ratio were demonstrated using high-resolution powder synchrotron x-ray diffraction, which explains the different modulation in the magnetic anisotropy of Co 3 Sn 2 S 2 due to the magnetostriction effect. Notably, the oxidation states of Co, Fe, and Ni in each single crystal were confirmed as 0 using x-ray absorption near-edge structure analysis, further explaining the dopant-induced suppression in ferromagnetism of Co 3 Sn 2 S 2 . These findings provide deeper insight into the band-filling effects on both TE and anomalous Hall transport in Co 3 Sn 2 S 2 , offering perspectives for topological spintronics and TE applications.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Heusler alloys: electronic and magnetic properties Topological Materials and Phenomena

Publication details

Journal / source
Physical Review Research
Volume
8
Issue
1
Publication date
9 January 2026
Language
EN