Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moiré crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and stacking orders. Here we report twisted double rhombohedral-trilayer-graphene as a new twisted crystalline flatband system showing rich moiré dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moiré filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moiré fillings including v = 1 / 4 , 1 / 3 , and 1 / 2 have been observed, whereas the Chern insulator at v = 1 is absent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.