Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN / Al 2 O 3 / Hf 0.8 Zr 0.2 O 2 / Nb tunnel junctions
Fields of Study & Subjects
Semiconductor materials and interfaces
Semiconductor materials and devices
Electronic and Structural Properties of Oxides
Publication details
- Journal / source
- Physical review. B./Physical review. B
- Publisher
- American Physical Society (APS)
- Volume
- 113
- Issue
- 13
- Publication date
- 18 February 2026
- Language
- EN