Inferring Charge-Noise Source Locations from Correlations in Spin Qubits

Physical Review Letters 2026 Open access

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Authors: Juan S. Rojas-Arias, Akito Noiri, J. Yoneda, Peter Stano, Takashi Nakajima, Kenta Takeda, T. Kobayashi, Giordano Scappucci, Seigo Tarucha, Daniel Loss
DOI: 10.1103/glp5-bb5b
Cited by: 7
References: 34

Abstract

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

Fields of Study & Subjects

Quantum and electron transport phenomena Quantum Information and Cryptography Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Physical Review Letters
Publisher
American Physical Society (APS)
Volume
136
Issue
2
Pages
027001–027001
Publication date
2 January 2026
Language
EN