Symmetry-adapted analysis of screw dislocations: Electronic structure and carrier recombination mechanisms in GaN

Physical review. B./Physical review. B 2026

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Authors: Yuncheng Xie, Haozhe Shi, Menglin Huang, Weibin Chu, Shiyou Chen, Xin-Gao Gong

DOI: 10.1103/l93t-lkx2

Cited by: 1

References: 30

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Silicon and Solar Cell Technologies

References 30