Strain-engineered electron and hole transport in gallium oxide

Physical review. B./Physical review. B 2026

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Authors: Kaike Yang, Hao-Mai Yang, Mei-Lin Li, Tang Ju-hong, Caixin Zhang, Guanghui Zhou, Benliang Zhou, Roberto D’Agosta
DOI: 10.1103/nkwg-4rr4
Cited by: 0
References: 64

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices

Publication details

Journal / source
Physical review. B./Physical review. B
Volume
113
Issue
1
Publication date
2 January 2026
Language
EN