Phase coexistence in Y - and La -doped Hf 0.5 Zr 0.5 O 2 thin films and its effect on the electrical properties in functional capacitors

Physical Review Applied 2026

View at publisher
Authors: Anna Grigorievna Chernikova, Aleksei S. Konashuk, Leonid L. Lev, Roman R. Khakimov, Ratibor G. Chumakov, Aleksey M. Lebedev, Elena O. Filatova, Maxim G. Kozodaev, Sergei S. Zarubin, Evgeny V. Korostylev, А. М. Маркеев, Andrei V. Zenkevich
DOI: 10.1103/ph5z-qf5l
Cited by: 0
References: 75

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Physical Review Applied
Volume
25
Issue
2
Publication date
2 January 2026
Language
EN