Scaling behavior in a sub-5-nm n -type monolayer Ge Te transistor

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Authors: Weiwei Ju, Mengshuo Kang, Pan Gao, Tongwei Li, Qingxiao Zhou, Xinxin Wang, Yanan Tang, Xiaotian Sun, Ruge Quhe, Jiangbo Lu
Cited by: 0
References: 56

Fields of Study & Subjects

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Phase-change materials and chalcogenides

Publication details

Journal / source
Physical Review Applied
Volume
25
Issue
2
Publication date
28 January 2026
Language
EN