Anisotropic directional dependence of impact ionization and carrier transport in 4 H - Si C : A full-band Monte Carlo study

Physical Review Applied 2026

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Authors: David Liu, Mike Zhu, Masahiko Matsubara, E. Bellotti

DOI: 10.1103/wpkm-5wfv

Cited by: 0

References: 58

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials Semiconductor materials and interfaces

References 58