Many-body Rashba spin-orbit interaction and exciton spin relaxation in atomically thin semiconductor structures
Abstract
We propose a pair spin-orbit interaction mechanism by establishing a mesoscopic many-particle Rashba Hamiltonian. In lowest order, this Hamiltonian self-consistently describes exciton spin relaxation in monolayer transition metal dichalcogenides (TMDC) due to local electric fields caused by spatial asymmetries in the dielectric environment. For a monolayer MoSe 2 on a sapphire or SiO 2 substrate above 77 K showing a bright-dark splitting in the meV range, the local electric field causes fast intravalley spin relaxation on a sub-picosecond time scale, whereas it is negligible for other TMDCs with larger bright-dark splitting.
Fields of Study & Subjects
Topological Materials and Phenomena
Quantum and electron transport phenomena
Semiconductor Quantum Structures and Devices
Publication details
- Journal / source
- Physical review. B./Physical review. B
- Publisher
- American Physical Society (APS)
- Volume
- 113
- Issue
- 12
- Publication date
- 20 February 2026
- Language
- EN