Lattice strain relaxation in thin Mo films grown heteroepitaxially on MgO single crystals

Mechanisms of the lattice strain relaxation in molybdenum thin films that were grown heteroepitaxially on (001)- and (011)-oriented MgO wafers using magnetron sputtering were studied using a combination of X-ray and electron diffraction and transmission electron microscopy. For the Mo film grown on (001)-oriented MgO, the X-ray diffraction pole figure measurements revealed (001) Mo ∥ (001) MgO & [110] Mo ∥ [100] MgO as the main orientation relationship. On the (011)-oriented MgO, the Mo film grew with the orientations (112) Mo ∥ (011) MgO & ±[ 1 10] Mo ∥ [ 1 00] MgO . In all cases, the stress generated by the lattice misfit exceeded the elastic deformation limit of Mo, which activated the lattice strain relaxation mechanisms, mainly the formation of dislocations and slip and twinning on the lattice planes {112}. The dominant relaxation mechanism depends on the mutual orientation between the film and the substrate, which defines the direction of the deformation force in the film. In the (001)-oriented film, the lattice strain produced by the lattice misfit was reduced by twinning and dislocations. In the film having the (112) orientation, the main relaxation mechanism was the formation of dislocations. In both cases, the deformation energy was additionally reduced by the small lateral size of the Mo crystallites.