An Unsupervised Learning Approach to Validate the Robustness of Octagonal MOSFETs in X-Ray Environments

This work presents a comparative statistical investigation into the enhanced ionizing radiation hardness between the Octagonal (OnM) and Conventional (CnM) MOSFETs under X-ray environment. The primary objective is to quantify the robustness of OnM across varying Total Ionizing Dose (TID) levels and biasing conditions. A comprehensive statistical framework was applied, integrating Z-score normalization, K-means clustering, Cramer’s V, and association analysis to evaluate device variability. Experimental results demonstrate that OnM devices exhibit significantly superior electrical consistency, evidenced by a markedly lower coefficient of variation (C.V.) for the on-state drain current (0.1020 vs. 0.5689) and higher cluster cohesion compared to CnM counterparts. Furthermore, a Bootstrap validation confirmed the high stability of OnM clusters (Jaccard coefficient minimum value of 81.2%), reinforcing their deterministic behavior. These findings statistically validate the OnM intrinsic resilience, supporting its suitability for reliable operation in mission-critical space, nuclear, and medical applications.