Reliability Evaluation and Failure Simulation Research of the PIN Limiter in Complex Electromagnetic Environments

As the electromagnetic environment becomes increasingly complex, high-power microwave (HPM) pulses with different parameters are superimposed and coupled into RF receivers. Consequently, the PIN limiter at the front end often fails due to excessive input power. To accurately solve the real-time distributions of electric field, carrier concentration, and lattice temperature inside the PIN limiter in complex electromagnetic environments, a field-circuit simulation model is established. This model considers the temperature dependence of thermal parameters. It can accurately characterize how heat generation and heat dissipation affect temperature variations in high-temperature regions of the limiter. Based on the field-circuit model, this article investigates the failure mechanism of the PIN limiter under the superposition waveform of two HPM pulses with close frequencies, i.e., the HPM beat wave. To analyze the influence of multi-HPM pulse superposition on the PIN limiter’s failure, this article compares the limiter’s electro-thermal parameter responses during failure processes under a single HPM pulse and under an HPM beat wave. The simulation results indicate that the thermal failure time of the PIN limiter under an HPM beat wave is shorter, meaning the limiter is more susceptible to damage. Furthermore, this article investigates the effects of the center frequency, peak voltage, and beat frequency of the HPM beat wave on the failure of the PIN limiter. The research results can provide a reference for evaluating the performance reliability of PIN limiters operating in complex electromagnetic environments.