Magnetoresistance in a 2-Terminal Structure for Current Limitation
Abstract
We present a theoretical study of the magnetoresistance in a thin semiconductor stripe between two metal layers for current limitation with and without metallic inclusion. Magnetoresistance dependence on the device geometry, the semiconductor mobility, and the contact resistivity between the metal and the semiconductor has been investigated through finite-element simulations. We have shown that higher mobility leads to a higher magnetoresistance ratio, whereas in general higher contact resistivity decreases it. Interestingly, the increase of the magnetoresistance ratio with increasing mobility and magnetic field is limited by the device dimension. For current limiting purpose, we find that it is more efficient to increase the length of the semiconductor rather than having an inclusion.
Fields of Study & Subjects
Electromagnetic Simulation and Numerical Methods
Magnetic Field Sensors Techniques
Magnetic properties of thin films
Publication details
- Journal / source
- IEEE Access
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 14
- Pages
- 101806–101815
- Publication date
- 1 January 2026
- Language
- EN