Design and Simulation of a Novel Superjunction MOSFET with Superior Reverse Recovery Performance

2026 6th International Conference on Electronics, Circuits and Information Engineering (ECIE) 2026

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Authors: Shiguang Shang, Jintao Ma, Yijie Ma, Jiarui Wei
DOI: 10.1109/ecie69549.2026.11565605
Cited by: 1
References: 10

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Silicon Carbide Semiconductor Technologies Radio Frequency Integrated Circuit Design

Publication details

Journal / source
2026 6th International Conference on Electronics, Circuits and Information Engineering (ECIE)
Publisher
IEEE
Pages
635–638
Publication date
8 May 2026