Extending the VTEAM Model for Improved I-V Characteristic Modeling and Inclusion of Cycle-to-Cycle Variability in Memristor Device

In this work, we enhance the widely used VTEAM model for resistive switching memristors to achieve improved representation of quasistatic I-V characteristics, while also incorporating cycle-to-cycle (C2C) variability. A sinh term is introduced into the I-V equation to better capture the nonlinear I-V characteristics, resulting in a lower relative root mean square error (RRMSE) compared to VTEAM. To model stochastic effects, an Ornstein-Uhlenbeck process is applied to key parameters, enabling realistic C2C variability while preserving inter-cycle correlations. The extended model is benchmarked against a previously reported experimental device, demonstrating close agreement in the case of both deterministic and stochastic behaviors. This unified framework enhances the applicability of VTEAM and supports its use in circuit-level and system-level simulations.