1532 V Vertical β-Ga 2 O 3 UMOSFET with Buried Field Shield

This work reports a vertical β-Ga2O3U-shaped trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET) with a record breakdown voltage of 1532 V. By introducing nitrogen ion implantation at the trench bottom to form a buried field shield, the electric field crowding at the trench corner was effectively alleviated. Compared with the device without the implanted blocking layer, the breakdown voltage was increased by approximately 600 V. These results demonstrate the feasibility of employing trench-bottom nitrogen implantation as a viable approach for realizing high-voltage β-Ga2O3UMOSFETs.