3D Lattice Monte Carlo Modeling of Morphology Formation of Si/SiOx Nanocomposites During Phase Separation of Nonstoichiometric Si Oxide Films

In this paper, a three-dimensional lattice model based on the Monte Carlo approach is presented. This model is developed to investigate the kinetics of morphology change during phase separation in nonstoichiometric Si oxide (SiOx, x < 2) films. The model takes into account the SiOx local atomic structure and probabilistic migration of oxygen atoms driven by the tendency of free energy minimization. The influence of the initial SiOx stoichiometry index x and film thickness on the morphology of the precipitated Si phase in the Si oxide matrix is analyzed. The morphology of the Si phase is shown to critically depend on the initial SiOx stoichiometry. Namely, isolated Si nanoparticles form at low excess Si content (x >= 1.4), while interconnected Si networks always appear at x