Modeling and Analysis of p-GaN Layer Effects in β-Ga 2 O 3 Schottky Barrier Diodes

International Conference on Electric Power and Renewable Energy (EPREC) 2026

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Authors: Tanvi Naik, C. K. Ramesha, Apurba Chakraborty
DOI: 10.1109/eprec66546.2026.11412036
Cited by: 0
References: 19

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and interfaces GaN-based semiconductor devices and materials

Publication details

Journal / source
International Conference on Electric Power and Renewable Energy (EPREC)
Pages
1–5
Publication date
2 January 2026
Language
EN