Plasmonically Engineered All-Inorganic Lead-Free Tin-Doped High Performance Perovskite Solar Cells

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Authors: Foysal Mahmud, Hemal Sharma, Tazrian Noor, Mustafa Habib Chowdhury
Cited by: 0
References: 14

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Abstract

Lead-free all-inorganic perovskite solar cells are gaining significant attention owing to their improved operational stability and nontoxicity. One such promising perovskite material is CsGeCl3; however, its high bandgap renders it unsuitable for use in single-junction perovskite solar cells (PSCs). This study employs first-principles density functional theory (DFT) calculations to explore the effects of tin (Sn) doping to reduce the bandgap and consequently enhance optical performance. Incorporation of 67% Sn atoms with 33% germanium (Ge), a bandgap of 1.58 eV was observed, making it suitable for a single-junction PSC. The absorption coefficient, complex refractive index, and band structures of both pristine and doped perovskite absorbers have been analyzed. Subsequently, an all-inorganic PSC with the optimized absorber layer (CsSn0.67Ge0.33Cl3) was designed to evaluate the device’s performance. Optical simulations were employed through the finite-difference time-domain (FDTD) technique. To further enhance performance, a hole transport layer (HTL) grating with a thin plasmonic metal over-layer was incorporated. Various structural parameters of the grating were adjusted, and different plasmonic metals were tested for the thin layer. The highest short-circuit current density (JSC) was achieved with aluminum (Al). The optimized nanograting PSC yielded a JSCof 28.14 mA/cm2compared to 23.63 mA/cm2for bare CsSn0.67Ge0.33Cl3PSC, and a power conversion efficiency (PCE) of 30.07% in comparison to 25.32% for bare CsSn0.67Ge0.33Cl3PSC resulting in a 18.75% increase in PCE. This computational study underscores the potential of bandgap engineering and optical manipulation using nanogratings to enhance the optical performance of stable and environmentally sustainable PSCs.

Fields of Study & Subjects

Perovskite Materials and Applications Thin-Film Transistor Technologies 2D Materials and Applications

Publication details

Journal / source
International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)
Pages
1–6
Publication date
29 January 2026
Language
EN