X-band GaN Front-end MMIC using 0.2 um GaN HEMT Technology
Abstract
In this paper, we designed and manufactured an X-band front-end MMIC with a power amplifier, low-noise amplifier, and switch integrated into one chip using $0.2 \mu \mathrm{mGaN}$ HEMT technology. The front-end MMIC with a chip size of $4.66 \mathrm{~mm} \times 3 \mathrm{~mm}$, shows receiver characteristics of 25 dB gain and 2 dB noise figure and transmitter characteristics of 23.5 dB gain, 43.5 dBm output power, and $37 \%$ PAE (power added efficiency) in the frequency range of $9 \sim 10 \mathrm{GHz}$.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Advanced Power Amplifier Design
Radio Frequency Integrated Circuit Design
Publication details
- Journal / source
- 2026 International Conference on Electronics, Information, and Communication (ICEIC)
- Publisher
- IEEE
- Pages
- 1–4
- Publication date
- 18 January 2026