Design and Analysis of 2D FET for NEMS Sensor Application

This project gives the design and analysis of the two-dimensional field-effect transistor (2D FET) for the sensor application of the nanoelectromechanical system (NEMS). Due to the superior electrical properties and the surface sensitivity of the material, the two-dimensional material such as graphene or MoS2is used as the FET material. For the 2D FET, the conductivity of the FET material changes due to the deformation caused by the application of the NEMS system. The sensitivity, power consumption, and the variation in the drain current are analyzed for the proposed sensor. The proposed sensor is suitable for biomedical sensing and environmental sensing because of its greater sensitivity and the lower power consumption.